WAFER-PLATING INTERFACE ENGINEERING
CRS conductive contact and sealing solution.
From equipment interfaces and wafer geometry to electrical contact, liquid sealing and process verification, we connect the critical conditions into one application-led solution.
01WHY GALAXY STAR
Reliable plating begins with contact and sealing.
Review the wafer edge, contact pressure and chemical exposure together, then check AOI and coplanarity on the target process.
Interface-led engineering
We begin with wafer geometry, installation space and contact positions, then define the conductive and sealing interface around the real equipment conditions.
Contact and sealing together
Electrical contact, liquid isolation and stable positioning are reviewed as one connected interface instead of separate component requirements.
Verification closes the loop
AOI, coplanarity and defect review provide measurable feedback for interface conditions and process adjustments before release.
02PRODUCT & EQUIPMENT CONTEXT
The interface, shown at the scale that matters.
03ENGINEERING & VALIDATION
Define, verify and refine the interface.
Conductive contact and sealing
The contact and sealing interface is designed to deliver current to the wafer while isolating plating liquid from protected areas.
Application-specific interface review
CRS specifications are reviewed against the equipment model, wafer size, installation geometry, contact position and process chemistry so the interface can be matched to the intended operating conditions.
Six-inch wafer process validation
Six wafer records were reviewed through 2D and 3D AOI, final bump yield, height distribution, coplanarity and defect analysis. AOI yield ranged from 99.65% to 99.99%; the recorded maximum coplanarity ranged from 5.6 to 8.8 μm, within the stated criterion below 10 μm; no voids were detected.
Information required for assessment
Please provide the complete equipment model, wafer diameter, existing part number or photographs, dimensional drawings and plating chemistry before quotation.
PROCESS CHOICES & DOCUMENTED EXAMPLES
Better contact starts at the wafer edge.
Compare the interface design first; use wafer-level results to decide whether the alternative fits your process.
Swipe the table sideways to compare all columns.
| Evaluation | Reference design in the technical deck | Soft-conductive option |
|---|---|---|
| Contact interface | Metal contact structure | Conductive silicone composite; evaluate contact pressure and wafer-edge fit. |
| Water barrier | Fluoropolymer coating and retaining wall | Silicone barrier; verify chemical exposure and the sealing interface. |
| Edge geometry | 2.5–3.0 mm from wafer edge in the reference | Retaining wall: 1.8–2.5 mm in the documented design; confirm against the actual drawing. |
| Durability | Use the same process conditions for comparison | Technical deck reports a 2,500-cycle test target met; not a universal service-life warranty. |
Separate six-inch dummy-wafer records show AOI values of 99.65–99.99% and coplanarity of 5.6–8.8 μm across six entries (including a baseline). These are not a 2,500-cycle lifetime dataset or a zero-defect guarantee.
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